Department Publications

Plasma-assisted processes are critical in semiconductor fabrication, where variations in plasma parameters can lead to reduced yield and device failure. This work presents the design and experimental validation of a non-invasive plasma density sensing system, intended for use in plasma-enhanced process reactors without requiring structural modifications. A prototype sensor array was developed to measure ion current via embedded electrodes and tested in a custom-built low-pressure plasma chamber. Experimental results show a strong linear correlation between chamber pressure and sensor current, confirming the sensor's ability to track plasma density trends. Supporting simulations and data visualization further demonstrate the feasibility of this approach for real-time, non-invasive plasma diagnostics.